1 Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA
2 Division of Material Science and Engineering, Boston University, Brookline, MA 02446, USA
3 Department of Electrical and Computer Engineering and Photonics Center, Boston University, Boston, MA 02215, USA
4 Department of Physics, Boston University, Boston, MA 02215, USA
Cite as: Hongwei Zhao, Ran Zhang, Hamid T. Chorsi, Wesley A. Britton, et al. Gate-tunable metafilm absorber based on indium silicon oxide, nano Online. (2020). DOI: https://doi.org/10.1515/nano.0101.00365
Cite as: Hongwei Zhao, Ran Zhang, Hamid T. Chorsi, Wesley A. Britton, et al.. Gate-tunable metafilm absorber based on indium silicon oxide, Nanophotonics. 8, 1803 (2019). DOI: https://doi.org/10.1515/nanoph-2019-0190
In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.
Keywords: metafilm; indium silicon oxide; metamaterials; metasurface; Thin Films; Metallic; Metamaterials; Oxides; Synthesis and Manufacturing
